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M41T315Y M41T315V, M41T315W
Serial access phantom RTC supervisor
Not For New Design
Features

3.0V, 3.3V, or 5V operating voltage Real-time clock keeps track of tenths/hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years Automatic leap year correction valid up to 2100 Automatic switch-over and deselect circuitry Choice of power-fail deselect voltages: (VPFD = power-fail deselect voltage) - M41T315Y(a): VCC = 4.5 to 5.5V 4.25V VPFD 4.50V - M41T315V: VCC = 3.0 to 3.6V 2.80V VPFD 2.97V - M41T315W: VCC = 2.7 to 3.3V 2.60V VPFD 2.70V No address space required to communicate with RTC Provides nonvolatile supervisor functions for battery backup of SRAM Full 10% VCC operating range Industrial operating temperature range (-40 to +85C) Ultra-low battery supply current of 500nA (max) Optional packaging includes A 28-lead SOIC and SNAPHAT(R) top (to be ordered separately) SNAPHAT package provides direct connection for a snaphat top, which contains the battery and crystal RoHS compliant - Lead-free second level interconnect
28 1
16 1

SO16 (MQ)
SNAPHAT (SH) battery & crystal

SOH28 (MH)
a. Contact local ST sales office for availability.
November 2007
Rev 3
1/30
www.st.com 1
This is information on a product still in production but not recommended for new designs.
Contents
M41T315Y, M41T315V, M41T315W
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1 2.2 Non-volatile supervisor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
Clock operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 3.2 3.3 3.4 Clock register information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AM-PM/12/24 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Oscillator and reset bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Zero bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 5 6 7 8
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2/30
M41T315Y, M41T315V, M41T315W
List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC electrical characteristics (M41T315Y). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC electrical characteristics (M41T315V/W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 RTC register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Ablolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DC and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Crystal electrical characteristics (externally supplied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 SO16 - 16-lead plastic small outline (150 mils body width), package mechanical data . . . 23 SOH28 - 28-lead plastic small outline, package mechanical data . . . . . . . . . . . . . . . . . . . 24 SH - 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data . 25 SH - 4-pin SNAPHAT housing for 120mAh battery and crystal, package mechanical data 26 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 SNAPHAT battery table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
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List of figures
M41T315Y, M41T315V, M41T315W
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 28-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 M41T315Y/V/W to RAM/clock interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Read mode waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Write mode waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Comparison register definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Reset pulse waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Power down/up mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 SO16 - 16-lead plastic small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 SOH28 - 28-lead plastic small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 SH - 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data . 25 SH - 4-pin SNAPHAT housing for 120mAh battery and crystal, package outline . . . . . . . . 26
4/30
M41T315Y, M41T315V, M41T315W
Description
1
Description
The M41T315Y/V/W RTC Supervisor is a combination of a CMOS TIMEKEEPER(R) and a nonvolatile memory supervisor. Power is constantly monitored by the memory supervisor. In the event of power instability or absence, an external battery maintains the timekeeping operation and provides power for a CMOS static RAM by switching on and invoking write protection to prevent data corruption in the memory and RTC. The clock keeps track of tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, and year information. The last day of the month is automatically adjusted for months with less than 31 days, including leap year correction. The clock operates in one of two formats:
a 12-hour mode with an AM/PM indicator; a 24-hour mode
or
The nonvolatile supervisor supplies all the necessary support circuitry to convert a CMOS RAM to a nonvolatile memory. The M41T315Y/V/W can be interfaced with RAM without leaving gaps in memory. The M41T315Y/V/W is supplied in a 28-lead SOIC SNAPHAT(R) package (which integrates both crystal and battery in a single SNAPHAT top) or a-16 pin SOIC. The 28-pin, 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery and crystal. The unique design allows the SNAPHAT battery/crystal package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is also keyed to prevent reverse insertion. The 28-pin SOIC and battery/crystal packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is "M4TXX-BR12SH" (see Table 17 on page 28). Caution: Do not place the SNAPHAT battery/crystal top in conductive foam, as this will drain the lithium button-cell battery.
5/30
Description Figure 1. Logic diagram
VCCI VCCO
M41T315Y, M41T315V, M41T315W
D XI
(1)
Q
(1)
XO WE CEI OE RST
CEO M41T315Y M41T315V M41T315W
VBAT
(1)
VSS
AI03902
1. For 16-pin SOIC only
Table 1.
D Q
Signal names
XI-XO 32.768 KHz crystal connection Data input Data output Reset input Chip enable output Chip enable input Battery input Output enable input WRITE enable input Switched supply voltage output Supply voltage input Ground Not connected internally Don't Use
RST CEO CEI VBAT OE WE VCCO VCCI VSS NC DU
6/30
M41T315Y, M41T315V, M41T315W Figure 2. 16-pin SOIC connections
XI XO WE VBAT(1) VSS D Q VSS 16 1 2 15 3 14 4 M41T315Y 13 M41T315V 5 M41T315W 12 6 11 7 10 8 9 VCCI VCCO DU RST OE CEI CEO NC
AI03909
Description
Figure 3.
28-pin SOIC connections
WE NC NC NC NC NC NC VSS NC NC D Q NC VSS 1 2 3 4 5 6 M41T315Y 7 M41T315V 8 M41T315W 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCCI NC NC VCCO DU NC RST NC OE NC NC CEI CEO NC
AI03910
7/30
Description Figure 4. Block diagram
XO 32,768 Hz CRYSTAL CEO CEI OE WE RST CONTROL LOGIC READ WRITE POWER-FAIL XI
M41T315Y, M41T315V, M41T315W
CLOCK/CALENDAR LOGIC UPDATE TIMEKEEPER REGISTER
ACCESS ENABLE SEQUENCE DETECTOR
COMPARISON REGISTER
D Q
I/O BUFFERS
DATA INTERNAL VCC POWER-FAIL DETECT LOGIC
VCCI
VCCO
VBAT
AI03636B
8/30
M41T315Y, M41T315V, M41T315W Figure 5. M41T315Y/V/W to RAM/clock interface
Description
A0-An
A0-An
DATA I/O
D0-D7
WE OE
WE OE CE
CMOS SRAM VCC
CEO OE WE CE RST CEI RST VBAT X0 BAT
+
VCCO
D M41T315Y/V/W Q
VCC
VCCI
X1 VSS
VSS
32.768 Hz CRYSTAL
AI04258
9/30
Operation
M41T315Y, M41T315V, M41T315W
2
Operation
Figure 6 on page 11 illustrates the main elements of the device. The following paragraphs describe the signals and functions. Communication with the clock is established by pattern recognition of a serial bit stream of 64 bits which must be matched by executing 64 consecutive WRITE cycles containing the proper data on data in (D). All accesses which occur prior to recognition of the 64-bit pattern are directed to memory via the chip enable output pin (CEO). After recognition is established, the next 64 READ or WRITE Cycles either extract or update data in the clock and CEO remains high during this time, disabling the connected memory (see Table 2 on page 11). Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control of chip enable input (CEI), output enable (OE), and WRITE enable (WE). Initially, a READ cycle using the CEI and OE control of the clock starts the pattern recognition sequence by moving the pointer to the first bit of the 64-bit comparison register. Next, 64 consecutive WRITE cycles are executed using the CEI and WE control of the clock. These 64 WRITE cycles are used only to gain access to the clock. When the first WRITE cycle is executed, it is compared to the first bit of the 64-bit comparison register. If a match is found, the pointer increments to the next location of the comparison register and awaits the next WRITE cycle. If a match is not found, the pointer does not advance and all subsequent WRITE cycles are ignored. If a READ cycle occurs at any time during pattern recognition, the present sequence is aborted and the comparison register pointer is reset. Pattern recognition continues for a total of 64 WRITE cycles as described above until all the bits in the comparison register have been matched (see Figure 8 on page 14). With a correct match for 64 bits, access to the registers is enabled and data transfer to or from the timekeeping registers may proceed. The next 64 cycles will cause the device to either receive data on D, or transmit data on Q, depending on the level of OE pin or the WE pin. Cycles to other locations outside the memory block can be interleaved with CEI cycles without interrupting the pattern recognition sequence or data transfer sequence to the device. For a SO16 pin package, a standard 32.768 kHz quartz crystal can be directly connected to the M41T315Y/V/W via pins 1 and 2 (XI, XO). The crystal selected for use should have a specified load capacitance (CL) of 12.5 pF (see Table 10 on page 21).
10/30
M41T315Y, M41T315V, M41T315W
Operation
Table 2.
Mode Deselect WRITE READ READ Deselect Deselect
Operating modes
VCC 4.5 to 5.5V or 3.0 to 3.6V or 2.7 to 3.3V VSO to VPFD (min)(1) CEI VIH VIL VIL VIL X X OE X X VIL VIH X X WE X VIL VIH VIH X X D Hi-Z DIN Hi-Z Hi-Z Hi-Z Hi-Z Q Hi-Z Hi-Z DOUT Hi-Z Hi-Z Hi-Z Power Standby Active Active Active CMOS standby Battery back-up mode
VSO(1)
1. See Table 11 on page 21 for details.
2.1
Non-volatile supervisor operation
A switch is provided to direct power from the battery input or VCCI to VCCO with a maximum voltage drop of 0.3 Volts. The VCCO output pin is used to supply uninterrupted power to CMOS SRAM. The M41T315Y/V/W safeguards the clock and RAM data by power-fail detection and write protection. Power-fail detection occurs when VCCI falls below VPFD which is set by an internal bandgap reference. The M41T315Y/V/W constantly monitors the VCCI supply pin. When VCCI is less than VPFD, power-fail circuitry forces the chip enable output (CEO) to VCCI or VBAT-0.2 volts for external RAM write protection. During nominal supply conditions, CEO will track CEI with a propagation delay. Internally, the M41T315Y/V/W aborts any data transfer in progress without changing any of the device registers and prevents future access until VCCI exceeds VPFD. Figure 5 on page 9 illustrates a typical RAM/clock interface.
Figure 6.
Read mode waveforms
WE tRC tCW tCO CEI tOW tOD tRR
OE tOE tOEE tCOE Q DATA OUTPUT VALID AI04259 tODO
11/30
Operation Figure 7. Write mode waveforms
OE tWC tWP tWR
M41T315Y, M41T315V, M41T315W
WE tCW CEI t DH tDS D DATA INPUT STABLE
AI04261
tWR
tDH
Table 3.
Symbol tAVAV tELQV tGLQV tELQX tGLQX tEHQZ tGHQZ
AC electrical characteristics (M41T315Y)
Parameter(1) READ cycle time CEI access time OE access time CEI to output low Z OE to output low Z CEI to output high Z OE to output high Z READ recovery CEI pulse width OE pulse width WRITE cycle WRITE pulse width WRITE recovery Data setup Data hold time RST pulse width 10 55 55 65 55 10 30 0 65 5 5 25 25 Min 65 55 55 Typ Max Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tRC tCO tOE tCOE tOEE tOD tODO tRR
tELEH tGLGH tAVAV tWLWH tEHAX tWHAX tDVEH tDVWH tEHDX tWHDX
tCW tOW tWC tWP tWR(2) tDS(3) tDH(3) tRST
1. Valid for ambient operating temperature: TA = -40 to 85C; VCC = 4.5 to 5.5V (except where noted). 2. tWR is a function of the latter occurring edge of WE or CEI. 3. tDH and tDS are functions of the first occurring edge of WE or CEI in RAM mode.
12/30
M41T315Y, M41T315V, M41T315W
Operation
Table 4.
Symbol tAVAV tELQV tGLQV tELQX tGLQX tEHQZ tGHQZ
AC electrical characteristics (M41T315V/W)
Parameter(1) READ cycle time CEI access time OE access time CEI to output low Z OE to output low Z CEI to output high Z OE to output high Z READ recovery CEI pulse width OE pulse width WRITE cycle WRITE pulse width WRITE recovery Data setup Data hold time RST pulse width 20 65 60 85 60 25 35 5 85 5 5 30 30 Min 85 85 85 Typ Max Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tRC tCO tOE tCOE tOEE tOD tODO tRR
tELEH tGLGH tAVAV tWLWH tEHAX tWHAX tDVEH tDVWH tEHDX tWHDX
tCW tOW tWC tWP tWR(2) tDS(3) tDH(3) tRST
1. Valid for ambient operating temperature: TA = -40 to 85C; VCC = 4.5 to 5.5V (except where noted). 2. tWR is a function of the latter occurring edge of WE or CEI. 3. tDH and tDS are functions of the first occurring edge of WE or CEI in RAM mode.
13/30
Operation Figure 8. Comparison register definition
M41T315Y, M41T315V, M41T315W
7 BYTE 0 1
6 1
5 0
4 0
3 0
2 1
1 0
0 1
Hex Value C5
BYTE 1
0
0
1
1
1
0
1
0
3A
BYTE 2
1
0
1
0
0
0
1
1
A3
BYTE 3
0
1
0
1
1
1
0
0
5C
BYTE 4
1
1
0
0
0
1
0
1
C5
BYTE 5
0
0
1
1
1
0
1
0
3A
BYTE 6
1
0
1
0
0
0
1
1
A3
BYTE 7
0
1
0
1
1
1
0
0
5C AI04262
Note:
Pattern recognition in "hex" is C5, 3A, A3, 5C, C5, 3A, A3, and 5C. The odds of this pattern being accidentally duplicated and sending aberrant entries to the RTC is less than 1 in 1019. This pattern is sent to the clock LSB to MSB.
2.2
Data retention
Most low power SRAMs on the market today can be used with the M41T315Y/V/W. There are, however some criteria which should be used in making the final choice of an SRAM to use. The SRAM must be designed in a way where the chip enable input disables all other inputs to the SRAM. This allows inputs to the M41T315Y/V/W and SRAMs to be Don't Care once VCCI falls below VPFD(min). The SRAM should also guarantee data retention down to VCC = 2.0 volts. The chip enable access time must be sufficient to meet the system needs with the chip enable output propagation delays included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT. If data retention lifetime is a critical parameter for the system, it is important to review the data retention current specifications for the particular SRAMs being evaluated. Most SRAMs specify a data retention current at 3.0 volts. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally at elevated temperatures). The system level requirements will determine the choice of which value to
14/30
M41T315Y, M41T315V, M41T315W
Operation
use. The data retention current value of the SRAMs can then be added to the IBAT value of the M41T315Y/V/W to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT(R) of your choice can then be divided by this current to determine the amount of data retention available (see Table 17 on page 28). For a further more detailed review of lifetime calculations, please see Application Note AN1012.
15/30
Clock operation
M41T315Y, M41T315V, M41T315W
3
3.1
Clock operation
Clock register information
Clock information is contained in eight registers of 8 bits, each of which is sequentially accessed 1 bit at a time after the 64-bit pattern recognition sequence has been completed. When updating the clock registers, each must be handled in groups of 8 bits. Writing and reading individual bits within a register could produce erroneous results. These READ/WRITE registers are defined in Table 5 on page 17. Data contained in the clock registers is in binary coded decimal format (BCD). Reading and writing the registers is always accomplished by stepping though all eight registers, starting with Bit 0 of Register 0 and ending with Bit 7 of Register 7.
3.2
AM-PM/12/24 mode
Bit 7 of the hours register is defined as the 12-hour or 24-hour mode select bit. When high, the 12-hour mode is selected. In the 12-hour mode, Bit 5 is the AM/PM bit with logic high being PM. In the 24-hour mode, Bit 5 is the second 10-hour bit (20-23 hours).
3.3
Oscillator and reset bits
Bits 4 and 5 of the day register are used to control the reset and oscillator functions. Bit 4 controls the reset pin input. When the Reset Bit is set to logic '1,' the reset input pin is ignored. When the Reset Bit is set to logic '0,' a low input on the reset pin will cause the device to abort data transfer without changing data in the timekeeping registers. Reset operates independently of all other inputs. Bit 5 controls the oscillator. When set to logic '0,' the oscillator turns on and the real-time clock/calendar begins to increment.
3.4
Zero bits
Registers 1, 2, 3, 4, 5, and 6 contain one (1) or more bits that will always read logic '0.' When writing to these locations, either a logic '1' or '0' is acceptable.
16/30
M41T315Y, M41T315V, M41T315W
Clock operation
Table 5.
RTC register map
Function/range
Register 0 1 2 3 4 5 6 7
D7
D6
D5
D4
D3
D2
D1
D0
BCD format seconds seconds minutes hours day date month year 00-99 00-59 00-59 01-12/ 00-23 01-07 01-31 01-12 00-99
0.1 seconds 0 0 12/24 0 0 0 0 0 0 0 0 10 seconds 10 minutes 10/ A/P OSC hrs RST 0
0.01 seconds seconds minutes hours (24 hour format) day of the week date: day of the month month year
10 date 10M
10 years
Keys: A/P = AM/PM bit 12/24 = 12 or 24-hour mode bit OSC = Oscillator bit RST = Reset bit 0 = Must be set to `0' Figure 9. Reset pulse waveform
RST
tRST
AI04260
17/30
Maximum rating
M41T315Y, M41T315V, M41T315W
4
Maximum rating
Stressing the device above the rating listed in the "Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Table 6.
Symbol TA TSTG TSLD(1) VCCI VIO IO PD
Ablolute maximum ratings
Parameter Operating temperature Storage temperature (VCC, oscillator off) Lead solder temperature for 10 seconds M41T315Y Supply voltage (on any pin relative to Ground) M41T315V/W Input or output voltages Output current Power dissipation -0.3 to +4.6 -0.3 to VCC to +0.3 20 1 V V mA W Value -40 to +85 Unit C C C C V
SNAPHAT
SOIC
(R)
-40 to +85 -55 to +125 260 -0.3 to +7.0
1. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260C (total thermal budget not to exceed 245C for greater than 30 seconds).
Caution: Caution:
Negative undershoots below -0.3V are not allowed on any pin while in the Battery Back-up mode. Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
18/30
M41T315Y, M41T315V, M41T315W
DC and AC parameters
5
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under the Measurement Conditions listed in the relevant tables. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters. Table 7. DC and AC measurement conditions
Parameter VCC supply voltage Ambient operating temperature Load capacitance (CL) Input rise and fall times Input pulse voltages Input and output timing ref. voltages M41T315Y 4.5 to 5.5V -40 to +85C 100pF 5ns 0 to 3V 1.5V M41T315V/W 2.7 to 3.6V -40 to +85C 50pF 5ns 0 to 3V 1.5V
Figure 10. AC testing load circuit
DEVICE UNDER TEST
400
CL
2.0V
CL includes JIG capacitance
AI04255
Note:
50pF for M41T315V. Table 8.
Symbol CIN CIO
(3)
Capacitance
Parameter(1)(2) Input capacitance Input/output capacitance Min Max 10 10 Unit pF pF
1. Effective capacitance measured with power supply at 5V; sampled only; not 100% tested. 2. At 25C, f = 1MHz. 3. Outputs were deselected.
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DC and AC parameters Table 9. DC characteristics
M41T315Y Sym Parameter Test condition(1) Min IIL(2) IOL Input leakage current Output leakage current 0V VIN VCC 0V VOUT VCC -65 Typ
M41T315Y, M41T315V, M41T315W
M41T315V/W -85 Max 1 1 10 Min Typ Max 1 1 6 100 2 1 -0.3 2.0 0.6 VCC + 0.3 0.4 2.4 4.50 2.80 (V) 2.60 (W) 2.5 3.7 2.5 VCC1 - 0.2 or VBAT - 0.2 3.7 2.97 (V) 2.70 (W) A A mA mA mA mA V V V V V V V Unit
ICC1(3) Supply current ICCO1(4) ICC2(3) ICC3(3) VIL(5) VIH(5) VOL(6) VOH(6) VPFD VSO VBAT VCC power supply current Supply current (TTL standby) VCC power supply current Input low voltage Input high voltage Output low voltage Output high voltage Power fail deselect Battery back-up switchover Battery voltage 2.5 VCC1 - 0.2 or VBAT - 0.2 VBAT = 3.0V TA = 25C VCC = 0V VCC0 = VBAT - 0.2V IOL = 4.0 mA IOH = -1.0 mA 2.4 4.25 VBAT VCC0 = VCC1 - 0.3 CEI = VIH CEI = VCC1 - 0.2 -0.3 2.2
150 3 1 0.8 VCC1 + 0.3 0.4
VCEO
CEO output voltage
V
IBAT(3)
Battery current Battery backup current
0.5
0.5
A
ICCO2(7)
100
100
A
1. Valid for ambient operating temperature: TA = -40 to 85C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted). 2. Applies to all input pins except RST, which is pulled internally to VCCI. 3. Measured without RAM connected. 4. ICCO1 is the maximum average load current the device can supply to external memory. 5. Voltages are referenced to Ground. 6. Measured with load shown in Figure 10 on page 19. 7. ICCO2 is the maximum average load current that the device can supply to memory in the battery backup mode.
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M41T315Y, M41T315V, M41T315W
DC and AC parameters
Table 10.
Symbol fO RS CL
Crystal electrical characteristics (externally supplied)
Parameter(1)(2) Resonant frequency Series resistance Load capacitance 12.5 Min Typ 32.768 60 Max Unit kHz k pF
1. These values are externally supplied. STMicroelectronics recommends the KDS DT-38: 1TA/1TC252E127, Tuning Fork Type (thruhole) or the DMX-26S: 1TJS125FH2A212, (SMD) quartz crystal for industrial temperature operations. KDS can be contacted at kouhou@ kdsj.co.jp or http://www.kdsj.co.jp for further information on this crystal type. 2. Load capacitors are integrated within the M41T315Y/V/W. Circuit board layout considerations for the 32.768kHz crystal of minimum trace lengths and isolation from RF generating signals should be taken into account.
Figure 11. Power down/up mode AC waveforms
VCC VPFD (max) VPFD (min) VSO tFB tF tPF CEI tPD CEO
AI04257
tR tREC DON'T CARE
VBAT
0.2V
VBAT
0.2V
tPD
Table 11.
Symbol tREC tF tFB tR tPF tPD(3)(4)
Power down/up trip points DC characteristics
Parameter(1)(2) VPFD (max) to CEI low VPFD (max) to VPFD (min) VCC fall time VPFD (min) to VSO VCC fall time VPFD (min) to VPFD (max) VCC rise time CEI high to power-fail M41T315Y CEI propagation delay M41T315V/W 15 ns Min 1.5 300 10 0 0 10 Max 2.5 Unit ms s s s s ns
1. Valid for ambient operating temperature: TA = -40 to 85C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted). 2. Measured at 25C. 3. Measured with load shown in Figure 10 on page 19. 4. Input pulse rise and fall times equal 10ns
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Package mechanical data
M41T315Y, M41T315V, M41T315W
6
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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M41T315Y, M41T315V, M41T315W
Package mechanical data
Figure 12. SO16 - 16-lead plastic small outline, package outline
A2 B e D A C CP
N
E
1
H A1 L
SO-b
Note:
Drawing is not to scale Table 12. SO16 - 16-lead plastic small outline (150 mils body width), package mechanical data
mm Sym Typ A A1 A2 B C D E e H L a N CP 1.27 0.35 0.19 9.80 3.30 5.80 0.40 0 16 0.10 0.10 Min Max 1.75 0.25 1.60 0.46 0.25 10.00 4.00 6.20 1.27 8 0.050 0.014 0.007 0.386 0.150 0.228 0.016 0 16 0.004 0.004 Typ Min Max 0.069 0.010 0.063 0.018 0.010 0.394 0.158 0.244 0.050 8 inches
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Package mechanical data
M41T315Y, M41T315V, M41T315W
Figure 13. SOH28 - 28-lead plastic small outline, package outline
A2 B e
A C eB CP
D
N
E
H A1 L
1 SOH-A
Note:
Drawing is not to scale. Table 13.
Sym Typ A A1 A2 B C D E e eB H L a N CP 1.27 0.05 2.34 0.36 0.15 17.71 8.23 3.20 11.51 0.41 0 28 0.10 Min Max 3.05 0.36 2.69 0.51 0.32 18.49 8.89 3.61 12.70 1.27 8 0.050 0.002 0.092 0.014 0.006 0.697 0.324 0.126 0.453 0.016 0 28 0.004 Typ Min Max 0.120 0.014 0.106 0.020 0.12 0.728 0.350 0.142 0.500 0.050 8
SOH28 - 28-lead plastic small outline, package mechanical data
mm inches
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M41T315Y, M41T315V, M41T315W
Package mechanical data
Figure 14. SH - 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data
A1
A2 A A3
eA D
B eB
L
E
SHTK-A
Table 14.
SH - 4-pin SNAPHAT housing for 48mAh battery and crystal, package mechanical data
mm inches Max 9.78 6.73 6.48 7.24 6.99 0.38 0.46 21.21 14.22 15.55 3.20 2.03 0.56 21.84 14.99 15.95 3.61 2.29 Typ Min 0 0.265 0.255 0 0.018 0.835 0.560 0.612 0.126 0.080 Max 0.385 0.285 0.275 0.015 0.022 0.860 0.590 0.628 0.142 0.090
Sym Typ A A1 A2 A3 B D E eA eB L Min
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Package mechanical data
M41T315Y, M41T315V, M41T315W
Figure 15. SH - 4-pin SNAPHAT housing for 120mAh battery and crystal, package outline
A1
A2 A A3
eA D
B eB
L
E
SHTK-A
Table 15.
SH - 4-pin SNAPHAT housing for 120mAh battery and crystal, package mechanical data
mm inches Max 10.54 8.00 7.24 8.51 8.00 0.38 0.46 21.21 17.27 15.55 3.20 2.03 0.56 21.84 18.03 15.95 3.61 2.29 Typ Min 0 0.315 0.285 0 0.018 0.835 0.680 0.612 0.126 0.080 Max 0.415 0.335 0.315 0.015 0.022 0.860 0.710 0.628 0.142 0.090
Sym Typ A A1 A2 A3 B D E eA eB L Min
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M41T315Y, M41T315V, M41T315W
Part numbering
7
Table 16.
Example: Device type M41T
Part numbering
Ordering information scheme
M41T 315Y -65 MH 6 E
Supply voltage and write protect voltage 315Y(1) = VCC = 4.5 to 5.5V; VPFD = 4.25 to 4.50V 315V = VCC = 3.0 to 3.6V; VPFD = 2.80 to 2.97V 315W = VCC = 2.7 to 3.3V; VPFD = 2.60 to 2.70V Speed -65 = 65ns (315Y) -85 = 85ns (315V/W)
Package MH(2) = SOH28 MQ = SO16
Temperature range 6 = -40 to 85C
Shipping method For SOH28: blank = Tubes (not for new design - use E) E = Lead-free package (ECOPACK(R)), tubes F = Lead-free package (ECOPACK(R)), tape & reel TR = Tape & reel (not for new design - use F) For SOH16: blank = Tubes (not for new design - use E) E = Lead-free package (ECOPACK(R)), tubes F = Lead-free package (ECOPACK(R)), tape & reel TR = Tape & reel (not for new design - use F)
1. Contact local sales office 2. The SOIC package (SOH28) requires the SNAPHAT(R) battery package which is ordered separately under the part number "M4Txx-BR12SHX" in plastic tube or "M4TXX-BR12SHXTR" in tape & reel form (see Table 17 on page 28).
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Part numbering Caution:
M41T315Y, M41T315V, M41T315W
Do not place the SNAPHAT battery package "M4TXX-BR12SH" in conductive foam as it will drain the lithium button-cell battery. For other options, or for more information on any aspect of this device, please contact the ST sales office nearest you. Table 17. SNAPHAT battery table
Description Lithium battery (48mAh) SNAPHAT Lithium battery (120mAh) SNAPHAT Package SH SH
Part number M48T28-BR12SH M48T32-BR12SH
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M41T315Y, M41T315V, M41T315W
Revision history
8
Revision history
Table 18.
Date Jun-2001 17-Jul-2001 18-Sep-2001 27-Sep-2001 01-May-2002 04-Nov-2002 26-Mar-2003 08-Jun-2004 26-Nov-2007
Document revision history
Revision 1.0 1.1 1.2 1.3 1.4 1.5 1.6 2.0 3 First issue Basic formatting changes Changed pin 8 in 28-pin to VSS Added ambient temp to DC characteristics table (Table 9) Modify reflow time and temperature footnote (Table 6) Modify crystal electrical characteristics table footnotes (Table 10); add marketing status (Table 16) Update test condition (Table 9) Reformatted; add lead-free information Reformatted document; product status Not for New Design; added lead-free second level interconnect information to cover page and Section 6: Package mechanical data; updated Table 6. Changes
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M41T315Y, M41T315V, M41T315W
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